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The Journal of Neuroscience, May 1, 2000, 20(9):3115-3128
Reluctant Gating of Single N-Type Calcium Channels during
Neurotransmitter-Induced Inhibition in Bullfrog Sympathetic
Neurons
Hye Kyung
Lee2 and
Keith S.
Elmslie1
1 Department of Physiology, Tulane University Medical
School, New Orleans, Louisiana 70112, and 2 Department of
Pharmacology, Chonbuk University Dental School, Chonju, Korea 561-756
 |
ABSTRACT |
Whole-cell recordings have been used to extensively characterize
the voltage-dependent inhibition of N-type calcium current induced by
various neurotransmitters. Results from these studies have yielded
several predictions on the effect of inhibition on N-channel gating,
namely delayed channel opening and inhibition-induced reluctant
openings. Previous single N-channel studies observed delayed channel
opening but failed to find reluctant openings. However, strong
depolarizations may be necessary to see reluctant openings, but this
was not tested. We have examined N-channel gating at voltages
depolarized to those used previously and found a
neurotransmitter-induced open state that has properties predicted for
the reluctant open state. The openings had lower open probability (Po) and brief open times compared to
the dominant gating state observed in control (high
Po). These reluctant events were
reduced after strong depolarizing pulses used to reverse inhibition.
The threshold voltage for activation of reluctant events was ~30 mV depolarized to that of the normal gating state (high
Po). However, an action potential
will provide sufficient depolarization to open reluctant
N-channels.
Key words:
cell-attached; patch-clamp; single
Ca2+ channel; N-type calcium current; norepinephrine; willing-reluctant model
 |
INTRODUCTION |
Neurotransmitters can inhibit
synaptic transmitter release by reducing N-type calcium current in the
nerve terminal (Yawo and Chuhma, 1993
). The most commonly observed
effect of neurotransmitters on N-current is a voltage-dependent
inhibition (Hille, 1994
; Dolphin, 1996
) that appears to be
intracellularly mediated by G-protein 
subunits (G
;
Herlitze et al., 1996
; Ikeda, 1996
). Along with voltage dependence
(temporary relief by strong depolarizations), this type of inhibition
is also time-dependent because current activation is slowed. The
voltage dependence appears to result from the transient dissociation of
G
from the N-channel (Golard and Siegelbaum, 1993
; Elmslie and
Jones, 1994
; Ehrlich and Elmslie, 1995
; Zamponi and Snutch, 1998
).
Thus, evoked currents after a strong depolarization are restored to
near control levels (facilitation) and to normal activation kinetics.
In addition to changes in activation kinetics, whole-cell data support
the idea that inhibited N-channels can open to a new reluctant open
state. The evidence includes: (1) strong depolarizations can open
inhibited channels without inducing facilitation, and (2) modulated
channels close more quickly, implying multiple open states (Elmslie et
al., 1990
; Boland and Bean, 1993
). Such observations were used to
generate the willing-reluctant model (Fig.
1; Bean, 1989
; Elmslie et al., 1990
). In
this model there are two pathways out of the reluctant "mode", so
the predominant pathway used by the channel can depend on the
conditions used to measure channel activity. Specifically, for weak
depolarizations [in which the reluctant closing (RC)-reluctant
opening (RO) equilibrium favors RC], the RC-willing closing
(WC) pathway dominates, producing long latencies to first channel
opening. However, for strong depolarizations RO is favored over RC, so
the RC-RO transition can occur first. Of course, this four-state model
is an over-simplification (multiple WC and RC states are likely),
but even after 10 years it still captures the essence of the problem.
The molecular interpretation of the model is that the reluctant (R)
states are G
-bound, whereas the willing (W) states are
G
-free. Thus, the "W" states are the normal gating states.
The affinity of G
is state-dependent with higher affinity for the
closed state. Thus, the observation of reluctant openings will imply
that the open channel can bind G
.

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Figure 1.
The willing-reluctant model with rate constants
(in sec 1) derived from whole-cell data from frog
sympathetic neurons (Elmslie et al., 1990 ). The rate constants for
normal opening and closing are k1 = 200 e+0.06(V + 5) and
k 1 = 200 e 0.06(V + 5), respectively. WC and
WO represent the willing closed and open states, respectively. RC and
RO represent the reluctant closed and open states, respectively.
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Two laboratories have previously examined the effect of
neurotransmitters on N-channel gating. Both groups found delayed
channel opening, but failed to observe reluctant openings (Carabelli et al., 1996
; Patil et al., 1996
). Two possibilities for this are that (1)
the channels used in these studies are fundamentally different or (2)
the voltage steps were too hyperpolarized. In support of the first
possibility, faster N-channel closing during neurotransmitter-induced
inhibition has not been observed in all preparations (Kasai, 1992
).
Single calcium channel studies have traditionally focused on relatively
negative voltages, in which the signal-to-noise ratio is good. However,
reluctant openings should be rare at these voltages. We have reexamined
this issue using low-noise recordings to examine more positive
voltages, and a preparation in which whole-cell data suggest that
reluctant openings should exist. We have found that N-channels can
exhibit an inhibition-induced reluctant gating state as predicted by
the willing-reluctant model.
 |
MATERIALS AND METHODS |
Cells. Neurons were dissociated from caudal
paravertebral sympathetic ganglia of adult bullfrogs (Rana
catesbeiana) by a collagenase/dispase digestion and trituration.
Cells were maintained in modified L-15 culture medium at 4°C until
use (usually 1-10 d) (Kuffler and Sejnowski, 1983
; Jones, 1987
;
Elmslie, 1992
).
Cell-attached patch recording. Recording conditions were
similar to those previously published from our laboratory (Elmslie, 1997
). Briefly, the pipette solution consisted of (in mM):
100 BaCl2, 10 tetraethylammonium chloride, 5 4-aminopyridine, and 10 N-methyl-D-glucamine (NMG)-HEPES. The
extracellular solution contained (in mM): 100 KCl, 10 K-HEPES, and 5 NMG-EGTA, 0.001 (±) Bay K 8644, pH 7.2. This
high-potassium solution effectively set the membrane potential to 0 mV
(Elmslie, 1997
). Bay K 8644 was present to reveal L-channels in the
patch (Plummer et al., 1989
). Patches containing L-type calcium
channels were excluded from analysis. When testing the effect of
norepinephrine (NE) on N-channel gating, either 30 or 100 µM NE was added to the pipette solution. A 30 µM concentration was used to slow potential
desensitization of the adrenergic receptors, which was clearly observed
in some patches exposed to 100 µM NE. The
dose-response relationship generated from whole-cell data in 100 mM Ba2+ shows that
30 µM NE elicits inhibitions ~90% of maximum
(Lee et al., 2000
). These high concentrations of NE were required to overcome the competitive block of the adrenergic receptors by the high
concentration of Ba2+ (Lee et al., 2000
).
Electrodes for single-channel experiments were fabricated from
fiber-filled glass [either Corning 7740, Kimble EN-1 (both outer
diameter (o.d.) 2.0 mm, inner diameter (i.d.) 0.7 mm; Garner Glass,
Indian Hills, CA) or Corning 7052 (o.d. 1.5 mm, i.d. 0.86 mm; A-M
Systems, Everett, WA)]. These electrodes had resistances ranging from
15 to 40 M
and were coated with the General Electric equivalent of
Sylgard (GE Silicones RTV615; General Electric Company, Waterford, NY).
An Axopatch 200A amplifier (Axon Instruments, Foster City, CA) was used
to amplify and filter (2 kHz) the currents. Currents were amplified an
additional 10 times by a Frequency Devices 900 Bessel filter and
digitized with a MacAdios II analog-to-digital converter (GW
Instruments, Somerville, MA) at 10 kHz (five times the filter cutoff
frequency). The experiment was controlled by an Macintosh II computer
running data acquisition software written by Dr. Stephen Ikeda (Guthrie
Research Institute, Sayre, PA), and the data were analyzed using
IgorPro (WaveMetrics, Lake Oswego, OR).
As described previously, some data were obtained in sets of 100 voltage
steps of 100 msec duration delivered at a 2 sec interval (Lee and
Elmslie, 1999
). Other data were recorded using a triple pulse protocol
to examine the voltage dependence of neurotransmitter-induced inhibition (Fig. 2). This protocol used
two 40 msec steps to the same voltage that bracket a 25 msec voltage
step to +70 mV, and the steps were given as a set of 100 with an
interval of 3 sec. Single N-channels were typically recorded from a
holding potential of
40 mV. This holding potential was used to
inactivate Ef-channels that contaminate some
patches, but N-channels were not inactivated at the
40 mV holding
potential (Elmslie, 1997
; Lee and Elmslie, 1999
). In some patches that
did not contain Ef-channels, a holding potential
of
80 mV was used. We have found no difference in N-channel activity
recorded from these two holding potentials.

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Figure 2.
NE induces voltage dependent inhibition of single
N-type calcium channels. Eight consecutive sweeps are shown from a
patch under control conditions (A) and another
patch exposed to 100 µM NE (B). The
control patch contained one N-channel and at least one
Ef-channel. The NE patch contained only a single N-channel.
NE inhibited N-channel activity during the prepulse (preceding the +70
mV conditioning pulse). However, the conditioning pulse restored
N-channel activity during the postpulse. At the bottom of each set of
individual sweeps is the pseudomacroscopic current, which was generated
by averaging 90 sweeps for A and 100 sweeps for
B. The difference between the number of sweeps averaged
results from exclusion of sweeps that contain transient noise events
(Elmslie, 1997 ). The line with long
dashes indicates the zero current level, and the
line with the short dashes indicates the
open channel current level.
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Analysis of single-channel records. Uncorrected capacitative
current and voltage-independent leakage current were removed from the
records by averaging null sweeps and subtracting them from the active
sweeps. Single-channel current amplitudes were determined using low
variance analysis (Patlak, 1988
, 1993
; Elmslie et al., 1994
; Elmslie,
1997
). Single-channel events were detected using the 50% threshold
detection method after being Gaussian-filtered at 1 kHz. These events
were log-binned into open and shut dwell time histograms (10 bins/decade; Sigworth and Sine, 1987
). The first closed time and the
last event in the step (whether closed or open) were excluded from
these dwell time histograms. The dwell time distributions were fit to
exponential functions using the Marquardt-Levenberg algorithm (IgorPro
routine). Three methods were used to determine the number of
exponential components required to best fit a dwell time histogram
(Colquhoun and Sigworth, 1995
). First, the histogram was visually
inspected. Second, the reproducibility of the time constants was
examined. Third, the
2 values for two
fits were compared to determine if a significantly better fit was
obtained with the additional component. The first closed time was used
to generate the cumulative first latency histogram.
As described above, the data were Gaussian-filtered at 1 kHz for
analysis of events. This was required for data at +40 and +50 mV at
which the amplitude of open channel current is small (~0.5 pA or
less). Without this additional filtering the baseline noise routinely
triggered the 50% threshold event detector, which made analysis
impossible. To be consistent, data from all voltages were filtered at 1 kHz. The data were not corrected for missed events. Treating the data
in this manner allowed us to make comparisons with previously published
data (Lee and Elmslie, 1999
).
As previously described (Lee and Elmslie, 1999
), we used two methods to
calculate Po during voltage steps. The
Po data in Figure 12 was calculated by
dividing the sum of the open times by the step duration. The mean
Po was determined by averaging the
Po measured from all sweeps at a
single voltage (including null sweeps). Plots of
Po versus voltage were fit to the
Boltzmann equation. Certain parameters were constrained when fitting
the data from NE patches. For the data from postpulse sweeps, the slope
was constrained to that observed in control sweeps (slope = 6; Lee
and Elmslie, 1999
). Whole-cell recordings demonstrate that activation
versus voltage relations in the presence of inhibitory neurotransmitters are returned to normal after strong depolarization (Ikeda, 1991
). The data from prepulse sweeps in NE were normalized to
the maximum Po calculated from the NE
postpulse data. Because the inhibition is voltage-dependent, the
prepulse Po will reach that of the
postpulse (voltage-dependent inhibition transiently reversed) at
depolarized voltages.
The other method of calculating Po
excluded the first latency (first shut time) and the last event if the
channel was shut. We call this Po-ex
for Po excluding first and last shut
times (Lee and Elmslie, 1999
). This method is best for looking at
changes in Po when the channel is
actively gating (e.g., when the channel changes gating modes).
 |
RESULTS |
Three types of calcium channels have been characterized in frog
sympathetic neurons, N-type, L-type, and Ef-type
channels (Elmslie, 1997
). The criteria for identifying these single
calcium channels have been previously published (Elmslie, 1997
).
Briefly, N-channels recorded in 100 mM
Ba2+ activate at voltages >0 mV, have a
slope conductance ~20 pS, and have a single-channel current at 0 mV
of ~1.4 pA. L-channels have similar slope conductance and current
amplitude as N-type, but gate at more negative potentials in the
presence of BayK 8644. Ef-channels have
single-channel current
~1/2 that of
N-type and L-type channels, which makes them easily distinguished. In
addition, Ef-channels are strongly inactivated by
holding the patch potential at
40 mV, which has no effect on N-type
or L-type channels (Elmslie et al., 1994
; Elmslie, 1997
).
The effect of NE was examined in 22 patches containing one or two
N-channels. The slope conductance of these N-channels ranged from 17 to
25 pS with a mean of 21.8 ± 2.5 pS (mean ± SD), and the
mean current at 0 mV was
1.4 pA. Many of these patches were excluded
from detailed analysis because they either (1) contained multiple
contaminating Ef-channels with sufficient
activity to prevent analysis of N-channel gating, or (2) had a noise
level that precluded analysis of N-channel activity at voltages more than +30 mV. The latter point is significant because we could only detect reluctant events at these depolarized voltages. Detailed analysis was applied to eight patches exposed to NE. Five of these patches contained a single N-channel, and another contained one N-channel and one Ef-channel. This
Ef-channel had a very low level of activity,
which made it easy to exclude these events. Two additional patches
contained two N-channels. These patches were used to examine open
times, but not shut times or Po. In
addition, control data were obtained from 12 patches (no NE in pipette)
used in our previous study (Lee and Elmslie, 1999
; 22.0 ± 1.5 pS
and a mean current at 0 mV of
1.4 pA). Ten of these patches contained
a single N-channel, whereas the remaining two patches contained two
N-channels.
NE can inhibit single N-channels
The inclusion of 100 µM NE in the pipette solution
inhibited N-channels recorded in the majority of patches. Because we
were not able to determine control activity before NE application, we
exploited the voltage dependence of inhibition and used a strong depolarizing pulse (the conditioning pulse) to temporarily reverse the
NE effect (Fig. 2). In whole-cell recordings it has been established that the ratio of the postpulse current amplitude (after the
conditioning pulse) to that of the prepulse (preceding the conditioning
pulse) is an index of inhibition (Elmslie et al., 1990
; Ikeda, 1991
; Elmslie, 1992
). A ratio near 1 indicates no N-channel inhibition, and
increasing postpulse/prepulse (post/pre) ratios correspond to
increasing inhibition (Elmslie et al., 1990
; Elmslie, 1992
). In Figure
2b the effect of NE can be observed during the
prepulse in which N-channel activity is suppressed relative to that
during the postpulse. N-channel activity in control patches was not
altered by the conditioning pulse (Figs. 2a,
3). To quantify the NE effect, we
averaged N-channel activity from many sweeps to obtain a
pseudomacroscopic current. The post-pre ratio was calculated from
prepulse and postpulse current amplitudes measured from the
pseudomacroscopic record for each patch. The average post-pre ratio was
0.9 ± 0.2 (range, 0.7-1.2; n = 6) for N-channels
recorded from control patches (Fig. 3). In the presence of 100 µM NE, the mean ratio was 2.4 ± 1.4 (mean ± SD; range, 0.8-5.6; n = 18). However, no
inhibition was evident in five of the 18 NE patches because the
post-pre ratio (range, 0.8-1.2) overlapped that of control patches
(Fig. 3). This was not surprising because it has been shown using
macropatches (hundreds of channels in cell-attached patch) that
N-channels in some membrane patches were insensitive to NE (Elmslie et
al., 1994
).

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Figure 3.
Variable effects of NE on single N-channels.
Prepulse and postpulse pseudomacroscopic currents were measured as the
average between 5 and 15 msec into the 40 msec depolarization to +30
mV. The ratio of postpulse current to prepulse current was calculated
for six control patches and 18 patches exposed to 100 µM
NE. A ratio of ~1 indicates no modulation, whereas ratios > 1 are positively correlated with the magnitude of inhibition.
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During neurotransmitter-induced inhibition fast and slow components of
whole-cell N-current activation can be observed (Marchetti et al.,
1986
). The fast component is similar to control activation, whereas the
slow component results from voltage-dependent inhibition of N-current
(Bean, 1989
; Grassi and Lux, 1989
; Elmslie et al., 1990
). In single
channels, the latency to first channel opening correlates with
macroscopic activation kinetics. Thus, neurotransmitter-induced inhibition has been shown to increase the delay to first N-channel opening (Carabelli et al., 1996
; Patil et al., 1996
). Under control conditions, a cumulative distribution of N-channel first latencies typically shows a monotonic rise after a brief delay (Fig.
4; see also Lee and Elmslie, 1999
).
However, the distribution has two components in the presence of NE
(Fig. 4). One component is similar to control, whereas the second
component shows the delayed channel opening of inhibited N-channels.
The short latency activation of the "inhibited" N-channel in some
sweeps is interesting because it shows that a single channel can switch
between inhibited and control activation kinetics (see Fig. 9).

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Figure 4.
NE increases the delay to channel opening.
A, B, Consecutive sweeps are shown for
four voltages from control and NE patches. The control data from 20-40
mV are from one patch, and the data at +50 mV are from a separate
patch. Each patch contained one N-channel and at least one
Ef-channel. The NE data from 20-40 mV are from one, and
the data at +50 mV are from a separate patch. Each patch contained only
a single N-channel. The NE concentration was 100 µM for
20-40 mV data and 30 µM for the +50 mV data. The
pseudomacroscopic currents for each voltage are shown beneath the
relevant sweeps. C, The latency to first channel opening
was measured and binned into a cumulative histogram (0.2 msec bin
width). To show the effect of NE on the distribution, the histograms
were normalized to the number of events in the last bin. The number of
sweeps used to generate the histograms were 85 and 47 (+20 mV), 80 and
70 (+30 mV), 37 and 93 (+40 mV), and 238 and 114 (+50 mV) for control
and NE patches, respectively.
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The NE-induced delay in first latency to channel opening occurs with
little change in subsequent shut times (Fig.
5). This is expected if N-channels follow
the RC-WC-willing opening (WO) pathway to open, and WC to RC
transitions are rare, because once channels become willing they
traverse the same closed states as control channels. Control shut time
distributions were generally well described by two exponential
functions, but a third component was noted in some patches (Lee and
Elmslie, 1999
). We observed no differences in shut time distributions
between NE and control patches at +20 and +30 mV (Fig. 5). However, NE
induced an increase in the frequency of long shut time events at +40
and +50 mV, which resulted in the histograms being consistently well
described by three exponential functions (Fig. 5). The mean shut time
for the third histogram component at +40 mV was 17 ± 6 msec
(mean ± SD) for the six patches examined, and the long shut
events comprised 13% of total events. Although shut times of similar
duration could be recorded in control patches at +40 mV, their
frequency was never sufficient to generate enough events to allow us to
obtain consistent fits to three exponential functions (Fig. 5) (see
also Lee and Elmslie, 1999
). At +50 mV the mean shut times for the long
shut events were 9 and 15 msec for the two NE patches examined. Figure
5 shows the one control patch in which we were able to fit three
exponentials to the shut time histogram at +50 mV. The third component
in this histogram comprised 10% of all events, which is smaller than
the two NE patches where that component comprised 20% (Fig. 5) and
53% of all events. Alterations in the shut time distribution (as
observed at +40 mV) would be expected if N-channels followed the
RC-RO-WO pathway.

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Figure 5.
NE induces a long shut time at +40 and +50 mV. Log
binned distributions of shut time measured from control and NE (30 µM) patches. The histogram was generated with 10 bins/decade. The control data are from a single patch that contained
one N-channel and at least one Ef-channel. The NE data from
20-40 mV are from one patch, and the data at +50 mV are from a
separate patch. Each NE patch contained only a single N-channel. The
smooth lines were generated from either double or triple
exponential fits to the data. The resulting time constants
( sh) are listed along with the number of events
used to generate the distribution.
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N-channel open times support two pathways to open for inhibited
channels. As in control, open time distributions were well fit by a
single exponential function at both +20 and +30 mV in patches exposed
to NE (Fig. 6), and the mean open times
were similar between NE and control patches (Table
1). This single exponential distribution
indicates a single open state, as expected if the inhibited channel
follows the RC-WC-WO pathway. At +40 and +50 mV, the open time
distribution was best fit by two exponential functions in all NE
patches examined (Fig. 6, Table 1). The mean open time of one component
matched that of control patches, whereas the second component yielded a
smaller mean open time (Fig. 6, Table 1). The amplitude of the brief
component at +40 mV comprised 40 ± 15% (mean ± SD; range,
22-71%) of the total. The brief component at +50 mV comprised 42 and
58% of the total amplitude in the two patches examined. Two mean open
times are predicted if the N-channel follows the RC-RO-WO
pathway.

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Figure 6.
NE induces brief openings at +40 and +50 mV, but
not at more hyperpolarized voltages. Log binned histograms (10 bins/decade) of open times are shown for N-channel activity from a
control and NE patches (30 µM). The control and NE data
are from same patches used for shut time histograms (Fig. 5). The solid
lines on the +20 and +30 mV histograms were generated by single
exponential fits. The control +40 mV histogram was also fit by a single
exponential. However, for the +40 mV histogram in NE and the +50 mV
histograms (control and NE), the dashed line is the
single exponential fit to the data, whereas the solid
line is a double exponential fit. The time constants
( o) from the fits are listed for each histogram.
The number of events used to generate the distribution is listed on
each histogram.
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At voltages more than or equal to +40 mV, the frequency of N-channel
gating with brief open times and long shut times was substantially
increased in NE-exposed patches over control patches. We hypothesize
that this results from reluctant gating. If there are separate RC-RO
and WC-WO modes (i.e., if the R-W transition is slow), then
short ROs should be adjacent to long RCs, and the long WOs adjacent to
short WCs. This prediction was examined by plotting the open times of
individual events against the following shut time (Fig.
7). Figure 7 compiles data from all
control and NE patches that contained only one N-channel. As expected
from the open and shut time distributions, the data from NE patches was
similar to that from control patches for +20 and +30 mV. This supports
our conclusion that reluctant openings were rare at these voltages.
However, at +40 and +50 mV the NE patches have a large number of brief
openings (<1 msec) that are followed by long closings (>10 msec). The
fraction of events at +40 mV below a
Po = 0.2 cutoff line was 0.13 for NE
(1609 of 6199 events) and 0.06 (808 of 13,928 events) for control. At
+50 mV this fraction was 0.16 (345 of 2155) for NE and 0.03 (136 of
5080) for control (Po = 0.2 serves as
an aid to highlight differences between control and NE patches). The
differences between control and NE patches were calculated to be
statistically significant using a binomial proportions test for
independent samples (Snedecor and Cochran, 1980
) with Z = 19 for +40 mV and Z = 16 for +50 mV
(Z > 1.7 is significant). For comparison, this
fraction at +30 mV was 0.19 for NE (584 of 3081) and 0.16 (2218 of
14165) for control, which was significantly different with
Z = 4. At +20 mV the fraction of events below the
Po = 0.2 cutoff was 0.41 for control
(3400 of 8311) and 0.39 for NE (399 of 1015), which was not
significantly different (Z = 1.0). When we combined
data from all patches we were able to observe a significant NE-induced
increase in events with brief open times followed by long shut times at
voltages more than or equal to +30 mV (Fig. 7). However, in individual patches we were only able to detect NE-induced gating changes at
voltages more than or equal to +40 mV. It is likely that the NE-induced
events were too rare at +30 mV to detect with the number of events we
typically recorded from single patches (~1500 events at +30 mV). Our
data are consistent with an NE-induced reluctant gating mode at
voltages more than or equal to+40 mV. As predicted by the
willing-reluctant model, this mode is characterized by brief open
times (
1 msec) and long shut times (~15 msec) at +40 and +50
mV.

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Figure 7.
NE induces reluctant gating that is characterized
by brief openings followed by long closings. Open times are plotted
against the following shut time for data from all patches containing
one N-channel. The line indicates Po = 0.2 and is presented to highlight gating differences between NE and
control. Control data are from seven patches for 20-40 mV and two
patches for 50 mV. NE data are from five patches for 20 mV, six patches
for 30 and 40 mV, and two patches for 50 mV. The number of control open
time and shut time pairs plotted are 8311 (20 mV), 14,165 (30 mV),
13,928 (40 mV), and 5080 (50 mV). The number of events plotted in NE
are 1015 (20 mV), 3081 (30 mV), 6199 (40 mV), and 2155 (50 mV). The NE
concentration was either 30 or 100 µM for 20-40 mV data,
but only 30 µM for 50 mV data.
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NE induces reluctant openings
We hypothesize that the NE-induced brief openings are reluctant
openings. However, under control conditions the N-channel has been
observed to switch between two modes of gating at +40 mV, high
Po
(Po > 0.5) and low
Po
(Po < 0.5; Lee and Elmslie, 1999
). At
+40 mV, the mean open time in the high
Po mode was ~3 msec compared to 1 msec for the low Po gating mode. The
mean open time of NE-induced brief openings is close to that of the low Po gating mode. However, low
Po gating was rare in control sweeps, accounting for only 14% of active sweeps (Lee and Elmslie, 1999
). Thus, these brief events could result from either a NE-induced increase
in low Po gating or NE-induced
reluctant gating. To distinguish between these two possibilities we
examined 100 msec steps to +40 mV. We expect that reluctant channels
will switch to willing gating during a depolarization that is
sufficiently strong to reverse inhibition. Figure
8 shows that NE-induced brief openings at
+40 mV were typically observed toward the beginning of the voltage
step, but switched to long openings (high
Po) by the end of the sweep. This was
not observed with N-channels gating in the low
Po mode (Fig. 8) (Lee and Elmslie,
1999
, their Fig. 6). The low Po gating
was observed throughout the voltage step, and this gating could be
sustained (~1 min) before reverting to the high
Po mode (Lee and Elmslie, 1999
).
Therefore, NE-induced gating appears to be distinct from low
Po gating. Because these NE-induced brief events match those of reluctant openings predicted by the willing-reluctant model, we will refer to them as reluctant
openings.

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Figure 8.
A comparison of low Po
gating (control) and NE-induced brief openings. A,
Twelve consecutive sweeps show the continuous low
Po gating that can be observed in N-channels
recorded from control patches. This patch contained only a single
N-channel. Note that the low Po gating does
not introduce a slow component of activation to the pseudomacroscopic
current (averaged from 88 sweeps). B, To compare the
NE-induced brief events with low Po gating,
twelve nonconsecutive sweeps are shown. Nonconsecutive sweeps were used
since sweeps with NE-induced brief events are not clustered like
those showing low Po gating. This patch
contained only a single N-channel. Note the slow activation of the
pseudomacroscopic current (average of 95 sweeps).
|
|
To confirm the effect of depolarization on reluctant N-channels, we
examined the effect of a +70 mV conditioning step on N-channel gating
in the presence of NE. Figure 9 shows 24 consecutive sweeps from a patch exposed to 100 µM NE. The
black arrowheads point to the seven sweeps with reluctant openings in
the prepulse. In six of seven sweeps, N-channel activity was converted
to high Po gating after the
conditioning step to +70 mV. The remaining sweep showed a long delay in
the postpulse before the channel opened (Fig. 9, open
arrowhead). This type of gating will be examined in further detail
below. Note that the channel switches between inhibited and control
gating even though the patch is constantly exposed to NE.

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Figure 9.
Strong depolarization converts reluctant events
into high Po gating. Twenty-four consecutive
sweeps illustrate the effect of 100 µM NE on N-channel
gating. The black arrowheads indicate the sweeps with
reluctant openings during the prepulse. The open
arrowheads show the sweeps with delayed channel opening and
reluctant events during the postpulse. The black circles
show sweeps with no openings during the prepulse, but high
Po gating during the postpulse. Note from
the prepulses that the channel switches between control-like (short
latency to high Po gating) and inhibited
gating. This patch contained only a single N-channel. The
pseudomacroscopic current shown at the bottom is an average of 99 sweeps. Facilitation measured from this pseudomacroscopic current was
1.9.
|
|
The data presented indicates that the primary effect of NE at voltages
less than +40 mV is to increase the latency to first opening, whereas
NE induces reluctant gating as the membrane is depolarized more than or
equal to +40 mV. Thus, NE should only affect N-channel
Po (excluding the first latency) at
those depolarized voltages. In addition, the conditioning pulse should
reduce any NE-induced changes in Po.
To test these predictions, Po
histograms were generated from prepulse and postpulse sweeps. Because
we were interested in measuring Po
only during active gating, we calculated
Po by excluding first latency and last
event if the channel was closed [we call this
Po-ex to distinguish it from the other
method of calculating Po (see
Materials and Methods; see also Lee and Elmslie, 1999
)]. In agreement
with the open time and shut time distributions, we did not notice
substantial differences in distribution of N-channel
Po-ex between prepulses versus
postpulses at +20 and +30 mV, except that there were more active sweeps
in the postpulse than in the prepulse (Fig.
10). However, at +40 mV the
Po-ex histograms from prepulse and
postpulse sweeps show two peaks, one at
Po ~0.1 and the other
Po ~0.8 (Fig. 10). The peak at
Po = 0.8 corresponds to high
Po gating (Lee and Elmslie, 1999
). Strong depolarization appears to switch the gating to high
Po, because the peak at
Po = 0.8 is increased whereas the
activity at Po < 0.2 is decreased in
the histogram from postpulse sweeps. Thus, reluctant events appear to
gate with a Po < 0.2 at +40 mV.

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Figure 10.
Strong depolarization shifts the gating of
inhibited N-channels from reluctant to high
Po at +40 mV.
Po-ex was measured for each sweep by
dividing the sum of open times by the sum of shut times (excluding the
first and last shut times; see Materials and Methods). Data from three
patches exposed to 100 µM NE are included in the
histogram. The bin width was 0.05 Po
units.
|
|
As shown before (Fig. 7), NE-induced brief openings are adjacent to
long closings, which we hypothesize to result from reluctant gating.
Because strong depolarization temporarily reverses the NE-induced
inhibition, such a depolarization should reduce reluctant gating. This
prediction was examined by plotting the open times of individual events
against the following shut time (Fig.
11). In agreement with the
Po histograms, there were no
differences observed in the scatter plots of prepulse and postpulse
events at either +20 or +30 mV. At +40 mV, there were many events below the Po = 0.2 line during the prepulse,
but the +70 mV conditioning pulse reduced the frequency of those events
in the postpulse. On average, 21% of prepulse events (174 of 830) fell
below the Po = 0.2 line, compared to
9% of postpulse events (145 of 1612; data from three single N-channel
patches). This difference was calculated to be significant
(Z = 7.7) using a binomial proportions test for
independent samples (Snedecor and Cochran, 1980
). For comparison, the
prepulse versus postpulse data at +30 mV was not significantly
different because Z = 0.52. These data strongly support
the prediction of the willing-reluctant model that inhibition places
the N-channel into a reluctant gating state. The reluctant open state
appears to have a Po ~0.1 and a mean
open time <1 msec at + 40 mV.

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Figure 11.
The conditioning pulse reduces reluctant events
at +40 mV. Individual events were plotted as their open time versus the
following shut time. The data are from the same three patches in Figure
10. The solid line indicates
Po = 0.2 and is presented to highlight
gating differences at +40 mV. The percentage of events beyond the
Po < 0.2 line were 40 and 40% (+20
mV), 17 and 16% (+30 mV), and 21 and 9% (+40 mV) for the prepulse and
postpulse sweeps, respectively. The number of open time and shut time
pairs plotted are 246 and 523 (+20 mV), 524 and 1174 (+30 mV), and 830 and 1612 (+40 mV) for the prepulse and postpulse sweeps,
respectively.
|
|
Postpulse Po is inhibited by NE
Whole-cell experiments show that strong depolarization cannot
fully recover the inhibited N-current in sympathetic neurons (i.e.,
postpulse current is always inhibited compared to control currents;
Elmslie et al., 1990
; Beech et al., 1992
; Boland and Bean, 1993
; Werz
et al., 1993
). It has been speculated that this results from a
voltage-independent component to the neurotransmitter-induced inhibition (Beech et al., 1992
; Hille, 1994
). Alternatively,
the inhibited postpulse could result from a mechanism of
voltage-dependent inhibition (Jones and Elmslie, 1997
). One such
mechanism could be G
binding to the open channel with lower
affinity than for the closed channel. Measurements of
Po demonstrate that the activity of
single N-channels cannot be completely recovered by strong depolarization (Fig. 12).
Po measured from all sweeps (including null sweeps) reaches a maximal value of ~0.5 under control conditions (Fig. 12a; Lee and Elmslie, 1999
). As expected, the +70 mV
conditioning pulse had no effect on Po
measured during the postpulse (compared with prepulse; Fig.
12a). In the presence of NE, the conditioning pulse
facilitates Po measured during the
postpulse as expected for voltage-dependent inhibition. However, the
conditioning pulse does not recover Po
to control levels. At +40 mV, control
Po = 0.62 ± 0.1 (mean ± SD; n = 3) for the prepulse and 0.59 ± 0.08 for
the postpulse. In the present of NE,
Po was reduced to 0.32 ± 0.16 (n = 3) for postpulse activity and 0.14 ± 0.1 for
prepulse activity (Fig. 12b). Thus, the strong conditioning
pulse fails to fully recover the gating of inhibited N-channels to the
high Po mode.

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Figure 12.
The conditioning step partially
recovers Po of the postpulse sweeps in NE
exposed patches. Po was measured as the sum
of open times divided by the sweep duration (including the latency to
channel opening). The mean Po was averaged
from all sweeps (including nulls) at the indicated voltage to provide
an estimate of mean N-channel activity during macroscopic recordings.
The Po from prepulse sweeps are indicated as
open symbols, whereas those from postpulse sweeps are
indicated as solid symbols. Separate symbols are used
for data from each control patch and each NE patch. Data are plotted
from three control patches (except n = 4 at +30 mV
and n = 2 at +10 mV) and four NE patches (except
n = 3 at +40 mV). The dashed lines
are Boltzmann fits to the prepulse data, and solid lines
are Boltzmann fits to the postpulse data. The fits to control data were
unconstrained (see Materials and Methods). However, the fit to the
postpulse data in NE was constrained so that the slope was 6, and the
fit to the prepulse data was constrained so that the maximum
Po was equal to that of the postpulse (see
Materials and Methods). The parameters for the fits in control were
V1/2 = 33.7 and 32.5 mV, slope 6.0 and
5.6 mV/e-fold, Po max = 0.84 and 0.74 for prepulse and postpulse data, respectively. The parameters for the
fits in NE were V1/2 = 44.3 and 28.4 mV, slope 10.9 and 6 mV/e-fold, Po max = 0.37 and 0.37 for prepulse and postpulse data, respectively.
|
|
Does postpulse inhibition result from voltage-dependent mechanisms or
can N-channels switch between voltage-dependent and voltage-independent
inhibition? At least some of the postpulse inhibition can be explained
by a voltage-dependent mechanism. The cumulative first latency
distribution from three single N-channel patches shows longer delays to
opening during the postpulse in the presence of NE as compared with
that during postpulse or prepulse under control conditions (Fig.
13a). Single-channel sweeps
show that the channel generally opens into a high
Po mode after the delay (Fig. 9).
However, in some sweeps brief reluctant events can be observed during
the delay to high Po gating (Figs. 9,
13b).

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Figure 13.
NE can delay channel opening during the
postpulse. A, Cumulative histograms of the latency to
first channel opening are shown for prepulse (dashed
line) and postpulse (solid lines) sweeps. NE is
placed between the postpulse and prepulse histograms from the patch
exposed to NE. To illustrate the effect of NE on the distributions, the
histograms have been normalized to the number of sweeps in last bin.
The data for the histogram were combined from three control patches and
three NE patches. The number of sweeps used was 212 and 207 (control)
and 173 and 223 (NE) for prepulse and postpulse, respectively.
B, Example sweeps from the same NE-exposed patch shown
in A. The vertical dashed line shows the
beginning of the postpulse. Note the delayed channel opening in these
postpulse sweeps.
|
|
 |
DISCUSSION |
We have compared the gating of N-channels inhibited by NE with
those in control patches. At voltages more than or equal to +40 mV a
new gating state is observed that exhibits a lower
Po (<0.2), brief open times (0.6 msec
at +40 mV and 1 msec at +50 mV) and long shut times (17 msec at +40 mV
and 12 msec at +50 mV) compared to the normal gating mode (high
Po). We have labeled these events
reluctant openings because they match the properties predicted by the
willing-reluctant model of voltage-dependent inhibition. The
occurrence of reluctant events is highly correlated with inhibition,
because their frequency is reduced after conditioning pulses used to
reverse inhibition and they are rarely observed in N-channels from
control patches (1.5% of active sweeps). In addition, we find that
inhibition induces a delay to channel opening at all voltages tested,
which agrees with previous reports (Carabelli et al., 1996
; Patil et
al., 1996
). However, these previous investigations failed to observe
reluctant openings in inhibited N-channel gating. When we examine
gating at voltages (less than +40 mV) similar to those previously used
(+20 mV, Carabelli et al., 1996
; +30 mV, Patil et al., 1996
), we also
do not observe changes in open or shut times. Thus, it is likely that
reluctant events were missed in these investigations because of the
voltage used to examine N-channel gating. Indeed, the Yue lab has
presented preliminary data that they can observe reluctant events at
+45 mV (Colecraft et al., 1999
).
Previous studies have examined single calcium channel gating in frog
sympathetic neurons under control conditions and in the presence of NE
(Lipscombe et al., 1989
; Delcour et al., 1993
; Delcour and Tsien,
1993
). Although these channels were thought to be N-type, it is now
clear that they were misidentified. The misidentified channel matches
an
-conotoxin GVIA-insensitive channel that we have called
"novel" (Elmslie et al., 1994
) or, more recently,
Ef-channel (Elmslie, 1997
).
The intracellular pathway mediating voltage-dependent inhibition
appears to involve direct interaction between G
and the N-channel
(Herlitze et al., 1996
; Ikeda, 1996
; De Waard et al., 1997
; Zamponi et
al., 1997
; Delmas et al., 1998
; Stephens et al., 1998
) (but see,
Diversé-Pierluissi et al., 1995
, 1997
). The voltage dependence
appears to result from the transient disruption of G
-N-channel
coupling, because the kinetics of reinhibition after strong
depolarization become faster with higher concentrations of active
G-proteins (Golard and Siegelbaum, 1993
; Elmslie and Jones, 1994
;
Ehrlich and Elmslie, 1995
; Zamponi and Snutch, 1998
). Boland and Bean
(1993)
interpreted the willing-reluctant model in terms of G-protein
binding and unbinding, with reluctant gating corresponding to the
G-protein-bound channel and G-protein unbinding leading to the willing
state. Figure 14 interprets the gating
we observe in terms of the willing-reluctant model. At the onset of
depolarization, the channel is in the G-protein-bound state, where it
is reluctant to open. If the depolarization is sufficiently strong
(more than or equal to +40 mV), the reluctant channel can open to the
RO state where it dwells only briefly. With time, at this voltage the
G
subunit unbinds from the channel, and the N-channel gates in
the willing mode (the RC-RO-WO pathway). In our recordings we have
termed willing gating the high Po mode to distinguish it from a low Po gating
mode we observed in N-channels recorded under control conditions. For
depolarizations less than +40 mV, the RC-RO equilibrium favors RC, so
reluctant openings are rare, and the dominant pathway is RC-WC-WO.
The RC-WC transition results in the observed longer latencies to first
opening for inhibited channels.

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Figure 14.
Interpretation of single-channel gating using the
willing-reluctant model. The model is shown to the
right. WC and WO represent willing closed and open
states, and RC and RO represent reluctant closed and open states,
respectively. The curly bracket shows the region of the
single-channel records where we believe the channel to be gating
reluctantly. The square bracket shows the region of the
records where the channel is gating in the high
Po mode (willing). The three sweeps are
nonconsecutive, and this patch contained two N-channels.
|
|
In sympathetic neurons, the depolarizing conditioning pulse does not
completely recover inhibited current to control levels. This has been
interpreted as either evidence for an additional voltage-independent
pathway of inhibition (Hille, 1994
) or as mechanism of
voltage-dependent inhibition (Jones and Elmslie, 1997
). Recently,
Delmas et al. (1999)
presented evidence supporting a "relatively"
voltage-independent inhibition mediated by
Gi-associated 
subunits. Their data
supports the involvement of both voltage-dependent and
voltage-independent pathways in the incomplete reversal of inhibition
(Delmas et al., 1999
). Our data supports the idea that voltage-dependent inhibition can explain at least part of this incomplete recovery of inhibited current. We find that in the presence
of NE the latency to first opening is not fully recovered to control
levels by the conditioning depolarization. These postpulse sweeps with
delayed channel opening could result from rebinding of G
during
the 10 msec interval between the conditioning step and postpulse. In
frog sympathetic neurons the half time to reinhibition was found to be
~50 msec for large inhibitions (Elmslie and Jones, 1994
). So given
the relatively slow kinetics, it is unlikely that rebinding can explain
all of the observed postpulse inhibition. Another possibility is that
strong depolarization does not always disrupt the coupling between
G
and the N-channel. This could be explained if the open channel
could still bind G
subunit with lower affinity than the closed
channel. Thus, another mechanism of postpulse inhibition could be that
some N-channels remain G-protein-bound despite strong depolarization.
Our observation of multiple transitions between RC and RO implies that
G
can remain bound to the open N-channel.
We found that some N-channels did not appear to be modulated by the NE
included in the patch pipette. This observation has also been made in
cell-attached patches containing hundreds of channels (macropatches;
Elmslie et al., 1994
). One likely explanation is that these N-channels
were not coupled to adrenergic receptors. Whole-cell recordings have
shown that the application of two neurotransmitters can have a
partially additive effect, as if some N-channels were coupled to one
receptor, whereas others were coupled to the other receptor, and the
remaining N-channels were coupled to both receptors (Elmslie, 1992
).
Carabelli et al. (1996)
included both an adrenergic and an opiate
receptor agonist in their patch pipette to increase the frequency of
observing inhibition of single N-channels.
One consistent observation from whole-cell recordings is that the
voltage-dependent pathway generally inhibits only a portion of the
N-current (rarely >60%). This could result from all N-channels not
being coupled to all receptors as discussed above, but even coapplication of several neurotransmitters fails to completely inhibit
N-current. The simplest explanation is that the G
does not reach
saturating concentrations (even for the closed channel). However, our
single-channel data show that in the constant presence of NE, the
N-channel will switch between inhibited and normal gating. The
distribution of first latencies from N-channels inhibited by NE has two
components. The slow component results from inhibition-induced delayed
channel opening, but the other matches that of control N-channel
gating. These two components mirror the activation of inhibited
N-current observed during whole-cell recordings (thousands of
channels). Although NE is constantly present, the N-channel can open
with normal delays into high Po gating
mode. Thus, some of the incomplete inhibition of N-current results from
single N-channels being inhibited only part of the time.
Physiological significance of reluctant openings
Our data show that the threshold for opening of reluctant channels
is approximately +40 mV, which may not appear to be physiologically relevant because the peak of the action potential barely reaches +40 mV
under physiological conditions (2 mM
Ca2+; Adams et al., 1986
). However, our
single-channel recordings used 100 mM
Ba2+ to maximize the single-channel
current amplitude. This concentration of
Ba2+ has been shown to shift N-channel
gating ~40 mV depolarized compared to an external solution containing
2 mM Ba2+ (Elmslie et al.,
1994
). Based on this observation, we estimate that +40 mV in 100 mM Ba2+ is equivalent to ~0
mV in physiological Ca2+. Thus, reluctant
events have an activation voltage that could be easily reached during
an action potential. In addition, voltages depolarized to 0 mV are
predicted to increase the Po of
reluctant openings and decrease the latency of N-channels opening
within the reluctant mode (Elmslie et al., 1990
; Boland and Bean, 1993
; Jones and Elmslie, 1997
). Thus, a reluctant channel could be opened during an action potential.
Neurotransmitters have been shown to reduce neurotransmitter release by
inhibiting N-type calcium current (Lipscombe et al., 1989
; Yawo and
Chuhma, 1993
; Koh and Hille, 1997
). Under control conditions N-channels
gating in the high Po mode provide the
Ca2+ influx needed to trigger vesicle
release. During inhibition, our recordings show that N-channels will
switch between inhibited and normal gating (Fig. 9). In addition,
inhibited channels may open reluctantly during the action potential.
The resulting Ca2+ influx would be
reduced, but not to zero, so repetitive activity could trigger release
through summation of the reduced Ca2+
influx generated by each action potential. In addition, it has been
shown that trains of action potentials can recover inhibited N-channels
(Brody et al., 1997
; Williams et al., 1997
; Park and Dunlap, 1998
;
Tosetti et al., 1999
), although this has not been a universal finding
(Penington et al., 1991
; Toth and Miller, 1995
). This ability of
N-channels to provide some Ca2+ influx
even during maximal inhibition may ensure that the synapse is never
completely shut down.
 |
FOOTNOTES |
Received Dec. 21, 1999; revised Feb. 14, 2000; accepted Feb. 17, 2000.
This work was supported by grants from National Institutes of Health
(NS33671) and the Louisiana Education Quality Support Fund
(LEQSF-RD-A-28). We thank Drs. Stephen Jones, Yong Sook Goo, Geoffrey
G. Schofield, and Ms. Haoya Liang for helpful suggestions throughout
this work.
Correspondence should be addressed to Keith S. Elmslie, Department of
Physiology, Tulane University Medical School, 1430 Tulane Avenue, New
Orleans, LA 70112. E-mail: kelmslie{at}mailhost.tcs.tulane.edu.
 |
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