The Journal of Neuroscience, October 29, 2003, ():
Psychostimulant-Induced Plasticity of Intrinsic Neuronal Excitability in Ventral Subiculum
J. Neurosci.
Cooper et al. 23 (30): 9937.
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Files in this Data Supplement:
- Supplemental Figure S1
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The current-voltage relationship between vSUB RS and BS neurons after repeated SAL or AMPH treatment and withdrawal. A, shows the subthreshold current-voltage (I-V) plot for RS and BS neurons in response to series of 600 ms duration step pulses from -200 to +100 pA . Because there were no differences between groups, the data points were pooled and a linear fit was performed to the linear portion of the I-V curve between -50 pA and 50 pA current injection and subsequently extrapolated. B, shows the pooled means of the RS and BS neurons in SAL and AMPH treated rats at the early (2-3 days) withdrawal time point. There were no differences in the I-V curve between the early and late (14-15 days) withdrawal time points, thus only the early withdrawal point is plotted as representative. Note the slight inward rectification in the hyperpolarizing region in both A and B. Panels C and D, shows the I-V curve measuring the Peak voltage deflection (C) and Integral (D) of the sEPSP response in RS and BS neurons to a series of somatic sEPSC inputs from 100 to 900 pA while each neuron was maintained at a holding potential of -67 mV. Panels E and F, shows the pooled RS and BS neuron sEPSP Peak and Integral response in the SAL/EW and AMPH/EW withdrawal treated groups. The groups were pooled and fit lines were obtained by fitting the linear portion of the curve from 100 to 300 pA and extrapolated. In panels E and F, note the slight outward rectification beginning at 10 mV (-57 mV).
- Supplemental Figure S2
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The effects of acute application of amphetamine to hippocampal slices on near threshold membrane potential oscillations, sEPSP amplification and action potential threshold in vSUB pyramidal neurons. A, shows the voltage-dependent amplification of near threshold membrane potential oscillations before (Baseline, n = 12) and 20 after amphetamine (AMPH)
(25-50 µM). B and C, show scatter plots of the near threshold peak (B) and integral (C) voltage-dependent amplification of simulated excitatory synaptic before (Baseline, n =6) and after AMPH (25 - 50µM). D, shows the sEPSC injection necessary to produce action potentials (rheobase) before (baseline) and after AMPH (25 - 50µM). The inset in A shows an example of the oscillations under baseline conditions. Bottom trace holding potential = -71.3 mV. Top trace holding potential = -55.6 mV. The inset in B shows an example of sEPSP amplification (baseline). Bottom trace holding potential = -76.2 mV; Top trace holding potential = -57.7 mV.
