Table 1.

Basic set of parameter values for the conductance-based model STN cell

    ParameterValue
gL2.25 nS/μm2
gK45.0 nS/μm2
gNa37.5 nS/μm2
gT0.5 nS/μm2
gCa0.5 nS/μm2
gAHP9.0 nS/μm2
vL−60.0 mV
vK−80.0 mV
vNa55.0 mV
vCa140.0 mV
τ Embedded Image500.0 msec
τ Embedded Image100.0 msec
τ Embedded Image17.5 msec
τ Embedded Image1.0 msec
τ Embedded Image1.0 msec
τ Embedded Image40.0 msec
φh0.75
φn0.75
φr0.2
k115.0
kCa22.5
ε3.75 × 10−5msec−1
θm−30.0
θh−39.0
θn−32.0
θr−67.0
θa−63.0
θb0.4
θs−39.0
θ Embedded Image−57.0
θ Embedded Image−80.0
θ Embedded Image68.0
θ Embedded Image−39.0
θg30.0
α5.0 msec−1
vG→S−85.0 mV
ςm15.0
ςh−3.1
ςn8.0
ςr−2.0
ςa7.8
ςb−0.1
ςs8.0
ς Embedded Image−3.0
ς Embedded Image−26.0
ς Embedded Image−2.2
ς Embedded Image8.0
β1.0 msec−1
  • Parameters in nanosiemans per square micrometer denote maximal conductances of corresponding currents in the STN current balance equation. Parameters in millivolts represent reversal potentials for these currents. Parameters in milliseconds are time constants relating to the time evolution of the gating variables in the Hodgkin–Huxley representations of these currents, whereas other parameters are associated constants.