Magnetoelectric devices for spintronics
The control of magnetism by electric fields is an important goal for the future development of
low-power spintronics. Various approaches have been proposed on the basis of either …
low-power spintronics. Various approaches have been proposed on the basis of either …
BiFeO3 epitaxial thin films and devices: past, present and future
The celebrated renaissance of the multiferroics family over the past ten years has also been
that of its most paradigmatic member, bismuth ferrite (BiFeO 3). Known since the 1960s to …
that of its most paradigmatic member, bismuth ferrite (BiFeO 3). Known since the 1960s to …
Ultrathin oxide films and interfaces for electronics and spintronics
Oxides have become a key ingredient for new concepts of electronic devices. To a large
extent, this is due to the profusion of new physics and novel functionalities arising from ultrathin …
extent, this is due to the profusion of new physics and novel functionalities arising from ultrathin …
Nearly total spin polarization in from tunneling experiments
We have performed magnetotransport measurements on La 2/3 Sr 1/3 MnO 3 / SrTiO 3 / La
2/3 Sr 1/3 MnO 3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800% …
2/3 Sr 1/3 MnO 3 magnetic tunnel junctions. A magnetoresistance ratio of more than 1800% …
Two-dimensional electron gas with universal subbands at the surface of SrTiO3
…, N Reyren, Y Apertet, P Lecoeur, A Barthélémy… - Nature, 2011 - nature.com
As silicon is the basis of conventional electronics, so strontium titanate (SrTiO 3 ) is the foundation
of the emerging field of oxide electronics 1 , 2 . SrTiO 3 is the preferred template for the …
of the emerging field of oxide electronics 1 , 2 . SrTiO 3 is the preferred template for the …
Ferroelectric control of spin polarization
A current drawback of spintronics is the large power that is usually required for magnetic
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …
writing, in contrast with nanoelectronics, which relies on “zero-current,” gate-controlled …
High Mobility in Heterostructures: Origin, Dimensionality, and Perspectives
We have investigated the dimensionality and origin of the magnetotransport properties of
LaAlO 3 films epitaxially grown on TiO 2-terminated SrTiO 3 001 substrates. High-mobility …
LaAlO 3 films epitaxially grown on TiO 2-terminated SrTiO 3 001 substrates. High-mobility …
Electric-field control of magnetic order above room temperature
Controlling magnetism by means of electric fields is a key issue for the future development
of low-power spintronics 1 . Progress has been made in the electrical control of magnetic …
of low-power spintronics 1 . Progress has been made in the electrical control of magnetic …
Inverse Tunnel Magnetoresistance in : New Ideas on Spin-Polarized Tunneling
JM De Teresa, A Barthélémy, A Fert, JP Contour… - Physical Review Letters, 1999 - APS
We report tunnel magnetoresistance (TMR) measurements on Co/SrTiO 3/La 0.7 Sr 0.3 MnO
3 junctions. The half-metallic La 0.7 Sr 0.3 MnO 3 electrode is used as a spin analyzer. The …
3 junctions. The half-metallic La 0.7 Sr 0.3 MnO 3 electrode is used as a spin analyzer. The …
Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films
We have explored the influence of deposition pressure and temperature on the growth of Bi
Fe O 3 thin films by pulsed laser deposition onto (001)-oriented Sr Ti O 3 substrates. Single-…
Fe O 3 thin films by pulsed laser deposition onto (001)-oriented Sr Ti O 3 substrates. Single-…