The genome sequence of Bacillus anthracis Ames and comparison to closely related bacteria

…, M Pop, HM Khouri, D Radune, JL Benton… - Nature, 2003 - nature.com
Bacillus anthracis is an endospore-forming bacterium that causes inhalational anthrax 1 .
Key virulence genes are found on plasmids (extra-chromosomal, circular, double-stranded …

Impurity enhancement of the 1.54‐μm Er3+ luminescence in silicon

J Michel, JL Benton, RF Ferrante… - Journal of applied …, 1991 - pubs.aip.org
The effect of impurity coimplantation in MeV erbium‐implanted silicon is studied. A
significant increase in the intensity of the 1.54‐μm Er 3+ emission was observed for different …

Multiplexed real-time polymerase chain reaction on a digital microfluidic platform

…, VK Pamula, WA Schell, JL Benton… - Analytical …, 2010 - ACS Publications
This paper details the development of a digital microfluidic platform for multiplexed real-time
polymerase chain reactions (PCR). Liquid samples in discrete droplet format are …

Omega-3 fatty acids upregulate adult neurogenesis

BS Beltz, MF Tlusty, JL Benton, DC Sandeman - Neuroscience letters, 2007 - Elsevier
Omega-3 fatty acids play crucial roles in the development and function of the central nervous
system. These components, which must be obtained from dietary sources, have been …

Electronically controlled reactions of interstitial iron in silicon

LC Kimerling, JL Benton - Physica B+ C, 1983 - Elsevier
The association and dissociation reactions of the interstitial iron-substitutional boron pair (Fe
i B s ) in silicon have been studied by capacitance transient techniques. Electronic …

Interstitial defect reactions in silicon

LC Kimerling, MT Asom, JL Benton… - Materials Science …, 1989 - Trans Tech Publ
A five level hierarchy of interstitial defect reactions has been observed in silicon involving
oxygen, carbon, Group III and Group V impurities. The deep electronic states of the mobile …

Carbon in silicon: Modeling of diffusion and clustering mechanisms

…, HJ Gossmann, GH Gilmer, JL Benton - Journal of Applied …, 2002 - pubs.aip.org
Carbon often appears in Si in concentrations above its solubility. In this article, we propose a
comprehensive model that, taking diffusion and clustering into account, is able to reproduce …

Hydrogen passivation of point defects in silicon

JL Benton, CJ Doherty, SD Ferris, DL Flamm… - Applied Physics …, 1980 - pubs.aip.org
Laser annealing or laser processing of semiconductor crystals has been shown to yield material
that is free of extended crystallographic defects. 1, 2 In the case of pulsed (10-150 nsec) …

Local structure of 1.54‐μm‐luminescence Er3+ implanted in Si

…, DJ Eaglesham, MA Marcus, JL Benton… - Applied physics …, 1992 - pubs.aip.org
Extended x‐ray absorption fine structure measurements from Er‐implanted Czochralski‐grown
Si samples, which exhibit strong luminescence at 1.54 μm, reveal a local sixfold …

Evaluation of a digital microfluidic real-time PCR platform to detect DNA of Candida albicans in blood

…, JL Benton, PB Smith, M Poore, JL Rouse… - European journal of …, 2012 - Springer
Species of Candida frequently cause life-threatening infections in neonates, transplant and
intensive care unit (ICU) patients, and others with compromised host defenses. The …