Table 4.

Basic membrane properties of included interneurons

Naive (n = 25)Pseudo (n = 32)Conditioned (n = 32)
Vrest (mV)−49.82 ± 1.87−49.20 ± 1.65−50.57 ± 1.26
Input resistance (MΩ)249.3 ± 42.6224.1 ± 35.2260.7 ± 51.8
AP threshold (mV)−44.08 ± 2.33−41.29 ± 1.15−43.14 ± 1.52
AP height (mV)70.04 ± 3.1871.10 ± 5.3270.96 ± 3.29
AP half width (ms)1.27 ± 0.111.39 ± 0.101.30 ± 0.13
Sag (mV)2.79 ± 0.162.64 ± 0.222.57 ± 0.19
  • Vrest is the resting membrane potential immediately after breaking into the cell. Input resistance is calculated as the slope of the IV curve. Action potentials were elicited by current injection through the recording electrode. Threshold was measured where the first derivative of the upslope of the trace equals 20 mV/ms. Height is the difference between the baseline and maximal depolarization. Half width is the width of the action potential at half of the height. Sag was measured as the difference in the peak versus the steady state hyperpolarization to a −100 pA current injection from a holding potential of −60 mV. n, Number of neurons.