Passive electrical properties of patch-clamp recording experiments
| Rs (MΩ) | Rm (MΩ) | Ileak (pA) | Cslow (pF) | |||||
|---|---|---|---|---|---|---|---|---|
| Control | flox/− | Control | flox/− | Control | flox/− | Control | flox/− | |
| Fig. 9A,B | 11.37 ± 0.58 | 11.87 ± 0.59 | 432 ± 27 | 416 ± 31 | −13.82 ± 1.22 | −15.70 ± 2.25 | 10.40 ± 0.24 | 10.84 ± 0.20 |
| Figs. 9C,D, 10, 11 | 15.91 ± 0.94 | 15.68 ± 0.92 | 359 ± 30 | 419 ± 26 | −22.00 ± 2.88 | −29.79 ± 4.28 | 9.12 ± 0.33 | 9.12 ± 0.30 |
Shown is the mean ± SEM of the passive electrical properties across all ruptured patch-clamp recording experiments in control and Atoh1cre;Pou4f1flox/− conditions.